Niobium Carbide and Tantalum Carbide as Nitrogen Reduction Electrocatalysts: Catalytic Activity, Carbophilicity, and the Importance of Intermediate Oxidation States.

Significant interest in the electrocatalytic reduction of molecular nitrogen to ammonia (the nitrogen reduction reaction: NRR) has focused attention on transition metal carbides as possible electrocatalysts. However, a fundamental understanding of carbide surface structure/NRR reactivity relationships is sparse. Herein, electrochemistry, DFT-based calculations, and in situ photoemission studies demonstrate that NbC, deposited by magnetron sputter deposition, is active for NRR at pH 3.2 but only after immersion of an ambient-induced Nb2O5 surface layer in 0.3 M NaOH, which leaves Nb suboxides with niobium in intermediate formal oxidation states. Photoemission data, however, show that polarization to -1.3 V vs Ag/AgCl restores the Nb2O5 overlayer, correlating with electrochemical measurements showing inhibition of NRR activity under these conditions. In contrast, a similar treatment of a sputter-deposited TaC sample in 0.3 M NaOH fails to reduce the ambient-induced Ta2O5 surface layer, and TaC is inactive for NRR at potentials more positive than -1.0 V even though a significant cathodic current is observed. A TaC sample with surface oxide partially reduced by Ar ion sputtering in UHV prior to in situ transfer to UHV exhibits a restored Ta2O5 surface layer after electrochemical polarization to -1.0 V vs Ag/AgCl. The electrochemical and photoemission results are in accord with DFT-based calculations indicating greater N≡N bond activation for N2 bound end-on to Nb(IV) and Nb(III) sites than for N2 bound end-on to Nb(V) sites. Thus, theory and experiment demonstrate that with respect to NbC, the formation and stabilization of intermediate (non-d0) oxidation states for surface transition metal ions is critical for N≡N bond activation and NRR activity. Additionally, the Nb suboxide surface, formed by immersion in 0.3 M NaOH of ambient-exposed NbC, is shown to undergo reoxidation to catalytically inactive Nb2O5 at -1.3 V vs Ag/AgCl, possibly due to hydrolysis or other, as yet not understood, phenomena.

Stability and activity of titanium oxynitride thin films for the electrocatalytic reduction of nitrogen to ammonia at different pH values.

The production of ammonia for agricultural and energy demands has accelerated research for more environmentally-friendly synthesis options, particularly the electrocatalytic reduction of molecular nitrogen (nitrogen reduction reaction, NRR). Catalyst activity for NRR, and selectivity for NRR over the competitive hydrogen evolution reaction (HER), are critical issues for which fundamental knowledge remains scarce. Herein, we present results regarding the NRR activity and selectivity of sputter-deposited titanium nitride and titanium oxynitride films for NRR and HER. Electrochemical, fluorescence and UV absorption measurements show that titanium oxynitride exhibits NRR activity under acidic conditions (pH 1.6, 3.2) but is inactive at pH 7. Ti oxynitride is HER inactive at all these pH values. In contrast, TiN - with no oxygen content upon deposition - is both NRR and HER inactive at all the above pH values. This difference in oxynitride/nitride reactivity is observed despite the fact that both films exhibit very similar surface chemical compositions - predominantly TiIV oxide - upon exposure to ambient, as determined by ex situ X-ray photoelectron spectroscopy (XPS). XPS, with in situ transfer between electrochemical and UHV environments, however, demonstrates that this TiIV oxide top layer is unstable under acidic conditions, but stable at pH 7, explaining the inactivity of titanium oxynitride at this pH. The inactivity of TiN at acidic and neutral pH is explained by DFT-based calculations showing that N2 adsorption at N-ligated Ti centers is energetically significantly less favorable than at O-ligated centers. These calculations also predict that N2 will not bind to TiIV centers due to a lack of π-backbonding. Ex situ XPS measurements and electrochemical probe measurements at pH 3.2 demonstrate that Ti oxynitride films undergo gradual dissolution under NRR conditions. The present results demonstrate that the long-term catalyst stability and maintenance of metal cations in intermediate oxidation states for pi-backbonding are critical issues worthy of further examination.

Vanadium oxide, vanadium oxynitride, and cobalt oxynitride as electrocatalysts for the nitrogen reduction reaction: a review of recent developments.

The electrocatalytic reduction of molecular nitrogen to ammonia-the nitrogen reduction reaction (NRR)-is of broad interest as an environmentally- and energy-friendly alternative to the Haber-Bosch process for agricultural and emerging energy applications. Herein, we review our recent findings from collaborative electrochemistry/surface science/theoretical studies that counter several commonly held assumptions regarding transition metal oxynitrides and oxides as NRR catalysts. Specifically, we find that for the vanadium oxide, vanadium oxynitride, and cobalt oxynitride systems, (a) there is no Mars-van Krevelen mechanism and that the reduction of lattice nitrogen and N2to NH3occurs by parallel reaction mechanisms at O-ligated metal sites without incorporation of N into the oxide lattice; and (b) that NRR and the hydrogen evolution reaction do occur in concert under the conditions studied for Co oxynitride, but not for V oxynitride. Additionally, these results highlight the importance of both O-ligation of the V or Co center for metal-binding of dinitrogen, and the importance of N in stabilizing the transition metal cation in an intermediate oxidation state, for effective N≡N bond activation. This review also highlights the importance and limitations ofex situandin situphotoemission-involving controlled transfer between ultra-high vacuum and electrochemistry environments, and ofoperandonear ambient pressure photoemission coupled within situstudies, in elucidating the complex chemistry relevant to the electrolyte/solid interface.